Yuzuru Ohji, : rechercher sur Z-Library

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1

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - A proposal of new concept milli-second annealing: Flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for fabrication of ultra shallow junction with improvement of metal gate high-k CMOS performance

Takashi Onizawa,, Shinich Kato,, Takayuki Aoyama,, Yasuo Nara,, Yuzuru Ohji,

Année:

2008

Langue:

english

Fichier:

PDF, 317 KB

english, 2008

2

[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - Improvement of pattern effect by optical-absorption carbon film and flexibly-shaped-pulse flash lamp annealing

Kato, Shinichi, Aoyama, Takayuki, Onizawa, Takashi, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2009

Langue:

english

Fichier:

PDF, 357 KB

english, 2009

3

[IEEE Technology (ICICDT) - Grenoble, France (2010.06.2-2010.06.4)] 2010 IEEE International Conference on Integrated Circuit Design and Technology - Pre-existing and process induced defects in high-k gate dielectrics ∼direct observation with EBIC and impact on 1/f noise∼

Sato, Motoyuki, Chen, Jun, Sekiguchi, Takashi, Chikyow, Toyohiro, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2010

Langue:

english

Fichier:

PDF, 502 KB

english, 2010

4

Simplified Surface Reaction Model of SF 6 /CHF 3 Plasma Etching of SiN Film

Iwakoshi, Takehisa, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 77 KB

english, 2009

5

VLSI reliability challenges: From device physics to wafer scale systems

Eiji Takeda, Kunihiko Ikuzaki, Hisao Katto, Yuzuru Ohji, Kenji Hinode, Akemi Hamada, Toshiyuki Sakuta, Takahiro Funabiki, Toshio Sasaki

Journal:

Microelectronics Reliability

Année:

1995

Langue:

english

Fichier:

PDF, 2.07 MB

english, 1995

6

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Multi-functional annealing using flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for high-k/metal gated CMOS devices

Aoyama, Takayuki, Kato, Shin-ichi, Onizawa, Takashi, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2009

Langue:

english

Fichier:

PDF, 588 KB

english, 2009

7

[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Flexibly-Shaped-Pulse flash lamp annealing with assisted temperature control (FSP-FLAplus) to realize a wide range of annealing conditions

Kato, Shinichi, Onizawa, Takashi, Aoyama, Takayuki, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2010

Langue:

english

Fichier:

PDF, 927 KB

english, 2010

8

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Anomalous behavior in the dependence of carrier activation on implant dose for extremely shallow source/drain extensions activated by flash lamp annealing

Kato, Shinichi, Onizawa, Takashi, Aoyama, Takayuki, Kazuto Ikeda,, Yuzuru Ohji,

Année:

2009

Langue:

english

Fichier:

PDF, 426 KB

english, 2009

9

[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Cathode electron injection breakdown model and work function dependent TDDB lifetime for high-k / metal gate stack pMOSFETs

Motoyuki Sato,, Kikuo Yamabe,, Kenji Shiraishi,, Seiichi Miyazaki,, Keisaku Yamada,, Ryu Hasunuma,, Takayuki Aoyama,, Yasuo Nara,, Yuzuru Ohji,

Année:

2008

Langue:

english

Fichier:

PDF, 258 KB

english, 2008

10

Spatially uniform lead perovskite thin films formed by MOCVD

Miki, Hiroshi, Muraoka, Kouji, Kanetomo, Masafumi, Ohji, Yuzuru

Journal:

Integrated Ferroelectrics

Année:

1995

Langue:

english

Fichier:

PDF, 479 KB

english, 1995

11

Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Ishibashi, Masato, Horita, Katsuyuki, Sawada, Mahito, Kitazawa, Masashi, Igarashi, Motoshige, Kuroi, Takashi, Eimori, Takahisa, Kobayashi, Kiyoteru, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 158 KB

english, 2005

12

Real-Time Measurement of W, TiN, and TaSiN Thicknesses Comprising Full-Metal Gates during Plasma Etching by Optical Interference of Etching Plasma

Iwakoshi, Takehisa, Ono, Tetsuo, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru, Joo, Kazuhiro, Saito, Go

Journal:

Japanese Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 276 KB

english, 2008

13

A method for high sensitivity deuterium measurements by means of the D(3He, p)4He reaction and its applications

Qi Qiu, Eiichi Arai, Michi Aratani, Minoni Yanokura, Tadashi Nozaki, Yuzuru Ohji, Ryo Imura

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1989

Langue:

english

Fichier:

PDF, 481 KB

english, 1989

14

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Vth fluctuation suppression and high performance of HfSiON/metal gate stacks by controlling capping-Y2O3 layers for 22nm bulk devices

Kamiyama, Satoshi, Etsuo Kurosawa,, Shoji Abe,, Masashi Kitajima,, Toshio Aminaka,, Takayuki Aoyama,, Kazuto Ikeda,, Yuzuru Ohji,

Année:

2009

Langue:

english

Fichier:

PDF, 992 KB

english, 2009

15

[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations

Motoyuki Sato,, Yoshihiro Sugita,, Takayuki Aoyama,, Yasuo Nara,, Yuzuru Ohji,

Année:

2008

Langue:

english

Fichier:

PDF, 377 KB

english, 2008

16

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Study of boron activation by flash lamp annealing from a view of depth dependence in silicon substrate

Takayuki Aoyama,, Shinichi Kato,, Kohichi Yamaguchi,, Takashi Onizawa,, Yasuo Nara,, Yuzuru Ohji,

Année:

2008

Langue:

english

Fichier:

PDF, 115 KB

english, 2008

17

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

Kamiyama, Satoshi, Ishikawa, Dai, Kurosawa, Etsuo, Nakata, Hiroyuki, Kitajima, Masashi, Ootuka, Minoru, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Année:

2008

Langue:

english

Fichier:

PDF, 942 KB

english, 2008

18

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Flash lamp annealing in diluted oxygen for low sheet resistance and ultra-shallow junctions: Suppression of wet-cleaning-induced sheet-resistance degradation

Shinichi Kato,, Takayuki Aoyama,, Takashi Onizawa,, Yasuo Nara,, Yuzuru Ohji,

Année:

2008

Langue:

english

Fichier:

PDF, 102 KB

english, 2008

19

[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Systematic study of the relationship between 1/ƒ noise, interface state defects and mobility ddgradtion of high-K /metal CMOSFETs on (110) and (100) substrate

Sato, Motoyuki, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Année:

2009

Langue:

english

Fichier:

PDF, 543 KB

english, 2009

20

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Tsuchiya, Toshiaki, Mori, Yuki, Morimura, Yuta, Mogami, Tohru, Ohji, Yuzuru

Année:

2009

Langue:

english

Fichier:

PDF, 1.48 MB

english, 2009

21

[IEEE 2007 International Workshop on Junction Technology - Kyoto, Japan (2007.06.8-2007.06.9)] 2007 International Workshop on Junction Technology - Study of Ultra-shallow Junctions Formed by Flash Lamp Annealing to Reveal Dopant Activation Phenomenon

Kato, Shinichi, Aoyama, Takayuki, Onizawa, Takashi, Nara, Yasuo, Ohji, Yuzuru

Année:

2007

Langue:

english

Fichier:

PDF, 3.95 MB

english, 2007

22

Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO 2 Gate Dielectrics

Sato, Motoyuki, Kamiyama, Satoshi, Matsuki, Takeo, Ishikawa, Dai, Ono, Tetsuro, Morooka, Tetsu, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2010

Langue:

english

Fichier:

PDF, 218 KB

english, 2010

23

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

Kato, Shinichi, Aoyama, Takayuki, Onizawa, Takashi, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2010

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2010

24

Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary-ion mass spectrometry, and x-ray photoelectron spectroscopy

Yu, Byoung-gon, Arai, Eiichi, Nishioka, Yasushiro, Ohji, Yuzuru, Iwata, Seiichi, Ma, T. P.

Journal:

Applied Physics Letters

Année:

1990

Langue:

english

Fichier:

PDF, 577 KB

english, 1990

25

Dielectric characteristics of fluorinated ultradry SiO2

Nishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 497 KB

english, 1989

26

Time-dependent changes of parasitic effects induced by high-field electron injection in metal-oxide-semiconductor transistors

Nishioka, Yasushiro, Kato, Masataka, Ohji, Yuzuru, Ma, T. P.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 609 KB

english, 1991

27

Effects of oxide-trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing

Nishioka, Yasushiro, Ohji, Yuzuru, Yoshida, Ikuo, Mukai, Kiichiro, Sugano, Takuo

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 510 KB

english, 1990

28

Thermal behavior of fluorine in SiO2 and Si investigated by the 19F(p,αγ) 16O reaction and secondary-ion mass spectrometry

Yu, Byoung-gon, Konuma, Naoki, Arai, Eiichi, Ohji, Yuzuru, Nishioka, Yasushiro

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 766 KB

english, 1991

29

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects

Shimokawa, Junji, Sato, Motoyuki, Suzuki, Chikashi, Nakamura, Mitsutoshi, Ohji, Yuzuru

Année:

2009

Langue:

english

Fichier:

PDF, 493 KB

english, 2009

30

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - High-k/metal gate stack technology for advanced CMOS

Nara, Yasuo, Ootsuka, Fumio, Inumiya, Seiji, Ohji, Yuzuru

Année:

2006

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2006

31

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - Transformation of Crystalline Structure of HfO

Suzuki, Takayuki, Matsuki, Takeo, Morooka, Tetsu, Sato, Motoyuki, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru

Année:

2010

Langue:

english

Fichier:

PDF, 354 KB

english, 2010

32

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO

Sato, Motoyuki, Kamiyama, Satoshi, Sugita, Yoshihiro, Matsuki, Takeo, Morooka, Tetsu, Suzuki, Takayuki, Shiraishi, Kenji, Yamabe, Kikuo, Yugami, Jiro, Ikeda, Kazuto, Ohji, Yuzuru, Ohmori, Kenji, Yamad

Année:

2010

Langue:

english

Fichier:

PDF, 330 KB

english, 2010

33

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

Nara, Yasuo, Mise, Nobuyuki, Kadoshima, Masaru, Morooka, Tetsu, Kamiyama, Satoshi, Matsuki, Takeo, Sato, Motoyuki, Ono, Tetsuo, Aoyama, Takayuki, Eimori, Takahisa, Ohji, Yuzuru

Année:

2008

Langue:

english

Fichier:

PDF, 764 KB

english, 2008

34

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Dopant Activation Phenomenon by Flash Lamp Annealing

Kato, Shinichi, Nara, Yasuo, Aoyama, Takayuki, Onizawa, Takashi, Ohji, Yuzuru

Année:

2008

Langue:

english

Fichier:

PDF, 712 KB

english, 2008

35

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation

Mise, Nobuyuki, Morooka, Tetsu, Eimori, Takahisa, Ono, Tetsuo, Nara, Yasuo, Ohji, Yuzuru

Année:

2008

Langue:

english

Fichier:

PDF, 431 KB

english, 2008

36

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process

Yamabe, Kikuo, Murata, Kouichi, Hayashi, Tomohiro, Tamura, T C., Sato, Motoyuki, Uedono, Akira, Shiraishi, Kenji, Umezawa, Naoto, Chikyow, Toyohiro, Watanabe, Heiji, Nara, Yasuo, Ohji, Yuzuru, Miyazak

Année:

2008

Langue:

english

Fichier:

PDF, 585 KB

english, 2008

37

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices

Ohmori, Kenji, Chikyow, T., Hosoi, Takuji, Watanabe, Heiji, Nakajima, Kiyomi, Adachi, Tetsuya, Ishikawa, Ayako, Sugita, Yoshihiro, Nara, Yasuo, Ohji, Yuzuru, Shiraishi, Kenji, Yamabe, Kikuo, Yamada, K

Année:

2008

Langue:

english

Fichier:

PDF, 14.73 MB

english, 2008

38

Defects in S i O 2 / S i Structures Probed by Using a Monoenergetic Positron Beam

Uedono, Akira, Wei, Long, Tanigawa, Shoichiro, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 213 KB

english, 1994

39

Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al 2 O 3 -Capped HfO 2 Dielectrics by Controlling Al 2 O 3 Diffusion Annealing Process

Morooka, Tetsu, Matsuki, Takeo, Mise, Nobuyuki, Kamiyama, Satoshi, Nabatame, Toshihide, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2009

40

Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

Sato, Motoyuki, Nabatame, Toshihide, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2009

Fichier:

PDF, 441 KB

2009

41

Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High- k /Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm

Sato, Motoyuki, Yamabe, Kikuo, Shiraishi, Kenji, Miyazaki, Seiichi, Yamada, Keisaku, Tamura, Chihiro, Hasunuma, Ryu, Inumiya, Seiji, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 318 KB

english, 2008

42

Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High- k P-Channel Field Effect Transistors Using Ion-Beam W

Ootsuka, Fumio, Katakami, Akira, Shirai, Kiyoshi, Nakata, Hiroyuki, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru, Shimura, Kazuhiro, Horii, Sadayoshi, Sano, Nobuyuki, Yamabe, Kikuo

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 366 KB

english, 2009

43

W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Yamashita, Tomohiro, Nishida, Yukio, Hayashi, Kiyoshi, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 218 KB

english, 2004

44

Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High- k Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

Kadoshima, Masaru, Matsuki, Takeo, Aminaka, Toshio, Kurosawa, Etsuo, Kitajima, Masashi, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 929 KB

english, 2009

45

Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO 2 /Si Analyzed by Positron Annihilation

Matsuki, Takeo, Watanabe, Toshinari, Miura, Takayoshi, Mise, Nobuyuki, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru, Uedono, Akira, Yamada, Keisaku

Journal:

Japanese Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 297 KB

english, 2007

46

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 121 KB

english, 2005

47

Uniform Ultra-Thin P b ( Z r , T i ) O 3 Films Formed by Metal-Organic Chemical Vapor Deposition and Their Electrical Characteristics

Miki, Hiroshi, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 871 KB

english, 1994

48

Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High- k /Metal Gate Stack p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Sato, Motoyuki, Aoyama, Takayuki, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 294 KB

english, 2009

49

Sub-Nanometer-Equivalent PZT Thin Films Fabricated by Low-Temperature MOCVD

Miki, Hiroshi, Ohji, Yuzuru, Tachi, Shinichi

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 291 KB

english, 1992

50

Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

Ohji, Yuzuru, Uedono, Akira, Wei, Long, Tabuki, Yasushi, Tanigawa, Shoichiro

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 417 KB

english, 1992